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| RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526. Features * 12A, 100V * rDS(ON) = 0.200 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power-Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Ordering Information PART NUMBER RFP12N10L PACKAGE TO-220AB BRAND F12N10L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 6-224 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP12N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 100 100 12 30 10 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250mA, VGS = 0V VGS = VDS, ID = 250mA (Figure 7) VDS = 65V, VDS = 80V VDS = 65V, VDS = 80V TC = 125oC MIN 100 1 ID = 6A, VDD = 50V, RG = 6.25, VGS = 5V (Figures 9, 10, 11) RFP12N10L TYP 15 70 100 80 MAX 2 1 50 100 0.2 900 325 170 50 150 130 150 2.083 UNITS V V A A A pF pF pF ns ns ns ns oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction to Case IGSS rDS(ON) CISS COSS CRSS td(ON) tr td(OFF) tf RJC VGS = 10V, VDS = 0V ID = 12A, VGS = 5V (Figures 5, 6) VGS = 0V, VDS = 25V, f = 1MHz (Figure 8) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 80s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 6A ISD = 4A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 6-225 RFP12N10L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 10 DC OPERATION Unless Otherwise Specified 100 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID(MAX) CONTINUOUS TC = 25oC TJ = MAX RATED 0.8 0.6 0.4 0.2 0 1 60W 0 50 100 150 TC, CASE TEMPERATURE (oC) 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. FORWARD BIAS OPERATING AREA 40 ID(ON), ON-STATE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE 0.5% TC = 25oC ID, DRAIN CURRENT (A) 30 VGS 5V 20 VDS = 10V PULSE DURATION = 80s DUTY CYCLE 0.5% 15 25oC 10 125oC 5 125oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 1 2 -40oC = 10 V 20 4V 10 3V 2V -40oC 3 4 5 0 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS 0.3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 125oC 2.0 VGS = 5V, ID = 12A PULSE DURATION = 80s DUTY CYCLE 0.5% 1.5 0.2 25oC -40oC 1.0 0.1 VGS = 5V PULSE DURATION = 80s DUTY CYCLE 0.5% 0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 6-226 RFP12N10L Typical Performance Curves 1.3 1.2 THRESHOLD VOLTAGE (V) NORMALIZED GATE 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 0 50 100 150 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 VDS = VGS ID = 250A C, CAPACITANCE (pF) 600 Unless Otherwise Specified (Continued) 800 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS 400 200 COSS CRSS TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 DRAIN TO SOURCE VOLTAGE (V) BVDSS RL = 8.33 IG (REF) = 0.56mA VGS = 5V FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 GATE TO SOURCE VOLTAGE (V) 8 75 GATE VDD = BVDSS SOURCE V = BVDSS VOLTAGE DD 50 6 4 25 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 20 IG (REF) IG (ACT) t, TIME (s) 80 IG (REF) IG (ACT) 2 0 0 NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS 6-227 RFP12N10L Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 10V VGS + Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) IG(REF) 0 VGS = 5V DUT IG(REF) FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-228 |
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